| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of suppressing increase in the contact resistance caused by the shrinkage of a diffusion layer region, even when forming the diffusion layer region thiny. SOLUTION: When forming the diffusion layer region 5 separated by an element isolation region, the diffusion layer region 5 is formed separately in two stages by using a double exposure technique. Thus, even when forming the diffusion layer region 5 thiny, the shrinkage at both ends in the longitudinal direction of the diffusion layer region 5 is suppressed, and the increase of the contact resistance is suppressed, while securing the connection area of both ends in the longitudinal direction of the diffusion layer region 5 and a contact plug 13 embedded in a contact hole 12. COPYRIGHT: (C)2009,JPO&INPIT
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