发明名称 |
SUBSTRATE TREATING SYSTEM |
摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treating system which suppresses reliquefaction of a vaporized material and can improves the productivity. SOLUTION: In the substrate treating system where liquid material is vaporized and is introduced into a treatment room and a desired film is formed on a substrate by equipped with a vaporizer which is provided with a vaporization chamber having several outlets, a flow passage for discharging the vaporized material from one of the outlets via a valve is arranged; another flow passage for supplying the vaporized material to a reaction chamber from another outlet via a valve is arranged; and discharge and supply of the vaporized material is switched by operating opening and closing of the valves. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2008294190(A) |
申请公布日期 |
2008.12.04 |
申请号 |
JP20070137636 |
申请日期 |
2007.05.24 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
ONO KENJI;KATO TSUTOMU;MORIKAWA ATSUSHI;OKADA ITARU |
分类号 |
H01L21/31;C23C16/448 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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