MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURED BY MEANS OF THE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide semiconductor device which is free from an increase in electric resistance between a source electrode and a well region and can obtain a stable low-resistance contact region if a silicon carbide layer for forming a channel layer is either over-etched or under-etched. SOLUTION: The manufacturing method of the silicon carbide semiconductor layer includes a step of forming a contact region 8 with a second conductivity type on a front layer of a first silicon carbide layer 2 with a first conductivity type serving as a drift layer 2A, a step of forming a second silicon carbide layer 9 with a first conductivity type serving as a channel layer 9A on a surface of the first silicon carbide layer 2, a step of etching the second silicon carbide layer 9 formed on the contact region 8 and a step of ion-implanting (D) impurities with a second conductivity type toward the contact region 8 after etching the second silicon carbide layer 9. COPYRIGHT: (C)2009,JPO&INPIT