摘要 |
Semiconductor devices including a plurality of unit cells connected in parallel are provided. Each of the unit cells have a first electrode, a second electrode and a gate finger. One of the first electrodes at a center of the semiconductor device has a first width and one of the first electrodes at a periphery of the semiconductor device has a second width, smaller than the first width. The second electrodes have a substantially constant width such that a pitch between the gate fingers is non-uniform. Related methods are also provided.
|