发明名称 Metal interconnect System and Method for Direct Die Attachment
摘要 Provided herein is an exemplary embodiment of a semiconductor chip for directly connecting to a carrier. The chip includes a metal layer applied to a top surface of the chip; a passivation layer applied over the metal layer such that portions of the passivation layer is selectively removed to create one or more openings ("bond pads") exposing portions of the metal layer and one or more solderable metal contact regions formed on each of the one or more openings. The solderable metal contact regions electrically connect to the carrier when the chip is positioned face down on the carrier, supplied with a thin layer of solder and heated.
申请公布号 US2008296690(A1) 申请公布日期 2008.12.04
申请号 US20040581950 申请日期 2004.12.11
申请人 GREAT WALL SEMICONDUCTOR CORPORATION 发明人 ANDERSON SAMUEL S.;SHEN ZHENG;OKADA DAVID N.
分类号 H01L23/488;H01L;H01L21/44;H01L21/60;H01L23/485;H01L23/52;H01L27/088 主分类号 H01L23/488
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