发明名称 FILM FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, PROGRAM AND RECORDING MEDIUM
摘要 Bonding between a Cu diffusion preventing film and a Cu wiring in a semiconductor device is improved and reliability of the semiconductor device is improved. A film forming method for forming a Cu film on a substrate to be processed is provided with a first process of forming a bonding film on the Cu diffusion preventing film formed on the substrate to be processed, and a second process of forming a Cu film on the bonding film. The bonding film includes Pd. ® KIPO & WIPO 2009
申请公布号 KR20080106373(A) 申请公布日期 2008.12.04
申请号 KR20087027067 申请日期 2005.10.03
申请人 TOKYO ELECTRON LIMITED 发明人 KOJIMA YASUHIKO;YOSHII NAOKI
分类号 H01L21/28;H01L21/205 主分类号 H01L21/28
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