发明名称 |
FILM FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, PROGRAM AND RECORDING MEDIUM |
摘要 |
Bonding between a Cu diffusion preventing film and a Cu wiring in a semiconductor device is improved and reliability of the semiconductor device is improved. A film forming method for forming a Cu film on a substrate to be processed is provided with a first process of forming a bonding film on the Cu diffusion preventing film formed on the substrate to be processed, and a second process of forming a Cu film on the bonding film. The bonding film includes Pd. ® KIPO & WIPO 2009
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申请公布号 |
KR20080106373(A) |
申请公布日期 |
2008.12.04 |
申请号 |
KR20087027067 |
申请日期 |
2005.10.03 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KOJIMA YASUHIKO;YOSHII NAOKI |
分类号 |
H01L21/28;H01L21/205 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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