| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor element actualizing a counter electrode structure in which both electrodes face each other and high power without increasing voltage, and to provide a manufacturing method thereof. <P>SOLUTION: A process which grows a nitride semiconductor layer on a heterogeneous substrate; after that, a process which sticks a supporting substrate to the nitride semiconductor layer; and after that, a process which removes a heterogeneous substrate are provided. The sticking process forms a conductive layer by alloy eutectic. The removing process of the heterogeneous substrate is performed by laser irradiation, polishing, and chemical polishing. After the removing process of the heterogeneous substrate, a process which separates the nitride semiconductor layer so that an exposed surface of the nitride semiconductor layer is made in a chip-shape by etching is provided. After the removing process of the heterogeneous substrate, a process which forms a concave-convex shape on the exposed surface of the nitride semiconductor layer is provided. <P>COPYRIGHT: (C)2009,JPO&INPIT |
