| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a group III nitride semiconductor light emitting element excellent in both productivity and light emitting property by a method of forming a uniform crystal film on a substrate in a short time period to grow a group III nitride semiconductor excellent in crystallinity with a high crystal density on an intermediate layer as a buffer layer or the like. <P>SOLUTION: The method includes a step of forming an intermediate layer for forming an intermediate layer 12 comprising at least a group III nitride by sputtering on a substrate 11, a step of forming a stacked semiconductor for successively stacking an n-type semiconductor layer 14 having an under layer 14a, a light emitting layer 15 and p-type semiconductor layer 16 on the intermediate layer, and a preliminary step for plasma treating the intermediate layer in between the intermediate layer forming step and the stacked semiconductor forming step, wherein in the step of forming the under layer 14a included in the stacked semiconductor layer, the under layer 14a is formed by a sputtering method. <P>COPYRIGHT: (C)2009,JPO&INPIT |
