发明名称 CONNECTING METHOD, CONNECTION DEVICE, AND CONNECTION STRUCTURE OBTAINED BY USING SAME CONNECTING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a connecting method in which a connection structure having a semiconductor element reduced in curvature can easily be obtained, a connection device, and the connection structure. SOLUTION: Disclosed is the connecting method of connecting the semiconductor element 2 and a substrate 1 in an electrically conductive state by interposing a wiring connection material between the semiconductor element 2 and the substrate 1 having wiring and then heating and pressing the wiring connection material 3 from the side of the semiconductor element 2, the connecting method being characterized in that before heating and pressing the wiring connection material 3, a support member 7 having a thermal conductivity of≤1W×m<SP>-1</SP>×K<SP>-1</SP>at 25°C is provided on a first surface of the substrate 1 on the opposite side from a surface that the wiring connection material 3 comes into contact with, the area of a second surface of the support member 7 on the side of the semiconductor element 2 is larger than the area of a third surface of the semiconductor element 2 which comes into contact with the wiring connection material 3, and the semiconductor element 1 is disposed inside an outer periphery of the support member 7 when the semiconductor element 2 is viewed in a direction from the semiconductor element 2 to the substrate 1. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008294396(A) 申请公布日期 2008.12.04
申请号 JP20070325118 申请日期 2007.12.17
申请人 HITACHI CHEM CO LTD 发明人 TO GYOREI
分类号 H01L21/60;H05K3/32 主分类号 H01L21/60
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