GATE INSULATING FILM FORMING AGENT FOR THIN-FILM TRANSISTOR

摘要

[PROBLEMS] To provide a novel gate insulating film forming material which not only initial electric properties immediately after the production of a gate insulating film but also electric properties after other steps in the production of an organic thin-film transistor using a gate insulating film, and even reliability in electric properties of the produced element are taken into consideration. [MEANS FOR SOLVING PROBLEMS] A gate insulating film forming agent for a thin-film transistor characterized by comprising an oligomer compound or a polymer compound containing repeating units having a triazinetrione ring containing a hydroxyalkyl-containing group as a substituent on a nitrogen atom, and a solvent, a gate insulating film for a thin-film transistor produced therefrom, a thin-film transistor comprising the insulating film, and a process for producing them.