MASK FOR MANUFACTURING TFT, TFT AND MANUFACTURING THEREOF

摘要

A mask for manufacturing the TFT(Thin Film Transistor) and the TFT and a manufacturing method thereof are provided to prevent the problem such as the connection of source/drain and the separation of active layer by controlling the thickness of the photo resistor. A mask for manufacturing the TFT(Thin Film Transistor) comprises the channel region half exposure mask structure(1), the drain mask structure(2), and the source mask structure(3). The channel region half exposure mask structure exists on the outside part corresponding to the channel region by being expanded from the channel region of the thin film transistor. The channel region half exposure mask structure more includes the channel region neighboring half exposure mask structure(5).