发明名称 COMPOSITION FOR ANTIREFLECTION FILM FORMATION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION
摘要 <p>This invention provides a composition for antireflection film formation, for use in the formation of an antireflection film on a resist film, which is easy to handle, and, as with an antireflection film using PFOS, can form an antireflection film having excellent optical properties. The composition for an antireflection film formation is a composition for use in the formation of an antireflection film provided on a resist film and contains a predetermined fluorine compound. In the composition for antireflection film formation, the predetermined fluorine compound contributes to an improvement in optical properties of the antireflection film,thus an antireflection film having excellent optical properties can be formed.</p>
申请公布号 WO2008146625(A1) 申请公布日期 2008.12.04
申请号 WO2008JP59045 申请日期 2008.05.16
申请人 TOKYO OHKA KOGYO CO., LTD.;SAWANO, ATSUSHI;KOSHIYAMA, JUN;HIROSAKI, TAKAKO 发明人 SAWANO, ATSUSHI;KOSHIYAMA, JUN;HIROSAKI, TAKAKO
分类号 G03F7/11;G03F7/20;H01L21/027 主分类号 G03F7/11
代理机构 代理人
主权项
地址