| 摘要 |
PROBLEM TO BE SOLVED: To provide a new phase change type nonvolatile memory device for which multi-valued recording can be surely performed. SOLUTION: On an insulating film 14 coating the principal plane of a semiconductor substrate 12, a first electrode 16, a second electrode 18 and a memory part 20 in which information is recorded by phase change are formed. The memory part 20 has a multilayer structure in which a plurality of thin films are layered. In the bottom layer of the memory part 20, a first phase change layer 22 formed of a first phase change material is disposed. The first phase change layer 22 is provided between the first electrode 16 and the second electrode 18 so as to be in contact with the insulating film 14 and also be in contact with each of the first electrode 16 and the second electrode 18. On the first phase change layer 22, a first resistor layer 24 formed of a first resistor, a second phase change layer 26 formed of a second phase change material and a second resistor layer 28 formed of a second resistor are layered in the order. COPYRIGHT: (C)2009,JPO&INPIT |
