| 摘要 |
PROBLEM TO BE SOLVED: To accomplish a semiconductor device including Cu wiring capable of preventing Cu from being diffused into an interlayer insulation film. SOLUTION: A semiconductor device 1 includes, a first wiring layer 33, a second wiring layer 34 and a third wiring layer 35 being layered in order above a substrate surface 10a of a semiconductor substrate 10. The first wiring layer 33 is formed on the substrate surface 10a of the semiconductor substrate 10 such as a silicon-on-insulator (SOI) substrate and includes an interlayer insulation film 12, an inner wall barrier metal layer 15, Cu wiring 18 and an upper barrier metal layer 19. An upper surface 18a of the Cu wiring 18 is covered with the upper barrier metal layer 19 formed from a material similar to that of the inner wall barrier metal layer 15, wherein the upper barrier metal layer 19 is formed wider than a width of the upper surface 18a. The upper barrier metal layer 19 can prevent Cu from being diffused from the Cu wiring 18 to the interlayer insulation film 12 of an upper layer. COPYRIGHT: (C)2009,JPO&INPIT |
