| 摘要 |
PROBLEM TO BE SOLVED: To increase a light output while avoiding an increase in chip size, an increase in the number of electrodes, and an increase in power consumption, avoiding control other than the control with respect to a semiconductor laser and a modulator, and preventing light which is returned by residual reflection on an element end face from adversely affecting the characteristics of the semiconductor laser. SOLUTION: An optical semiconductor element 4 comprises a semiconductor laser 2 and a modulator 3 monolitically integrated on a semiconductor substrate 1 and non-reflective coats 5, 6 provided on both the end faces of the element. In the optical semiconductor element, a semiconductor laser 1 has a diffraction grating forming region 9 with a diffraction grating 8 having a phase shift 7 formed therein, a diffraction grating non-forming region 10, having the same active layer 15 as the diffraction grating forming region 9 and not having a diffraction grating 8 therein, and a single electrode 14 for injecting a current into the active layers 15 of the a diffraction grating forming and non-forming regions 9 and 10, respectively. The diffraction grating non-forming region 10 is provided with respect to a side of the diffraction grating forming region 9 provided with the modulator 3. COPYRIGHT: (C)2009,JPO&INPIT
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