| 摘要 |
PROBLEM TO BE SOLVED: To excellently form the gas atmosphere of a laser irradiation portion for a subject to be treated in laser treatment equipment. SOLUTION: There is provided a gas injection means which is provided on laser treatment equipment for irradiating a subject to be treated (an amorphous semiconductor thin film 2) with laser light 6 and treating the subject to be treated and which injects gas which forms an irradiation atmosphere in the vicinity of the laser light irradiation portion of the subject to be treated. The injection means includes a portion for introducing the gas (a gas supply pipe 12), a gas injection port 15 for injecting the gas toward the subject to be treated, and a gas flow path 13 which reaches the gas injection port from the portion for introducing the gas. An even flow surface for evening a gas flow in a direction intersecting with the direction of gas flow by disturbing a gas flow facing the direction of gas flow is provided on the gas flow path. Thus, an even irradiation atmosphere can be formed in the vicinity of the laser light irradiation portion of the subject to be treated, and even and high-quality treatment by use of irradiation with laser light can be performed. COPYRIGHT: (C)2009,JPO&INPIT
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