发明名称 SUBSTRATE TREATMENT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate treatment device capable of suppressing harmful effects to substrate treatment by a back-streaming gas from an exhaust line to a treatment chamber to ensure satisfactory substrate treatment. SOLUTION: The substrate treatment device 1 comprises the treatment chamber 201, an O<SB>3</SB>generation device 300 for generating the O<SB>3</SB>gas, a first gas supply pipe 232a used to supply the O<SB>3</SB>gas generated by the O<SB>3</SB>generation device 300, the exhaust line 302 branched from the first gas supply pipe 232a and used to exhaust the O<SB>3</SB>gas, a valve V2 provided to the first supply line 232a, a check valve 304 provided to the exhaust line 302, a pressure switch 306 for measuring the pressure at an upstream side in the exhaust direction than the check valve 304, a pressure gauge 310 at a downstream side in the exhaust direction than the check valve 304, and a controller 280 for interrupting or halting the substrate treatment when a differential pressure between the detected value of the pressure switch 306 and the detected value of the pressure gauge 310 exceeds the threshold value. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008294138(A) 申请公布日期 2008.12.04
申请号 JP20070136741 申请日期 2007.05.23
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 YAMAMOTO TETSUO;NAKAGAWA TAKASHI
分类号 H01L21/31;C23C16/44;C23C16/455;C23C16/54 主分类号 H01L21/31
代理机构 代理人
主权项
地址