| 摘要 |
A method for providing a deglitching circuit for a radiation tolerant static random access memory (SRAM) comprising: providing a configuration memory having a plurality of configuration bits; coupling read and write circuitry to the configuration memory for configuring the plurality of configuration bits; coupling a radiation hard latch to a programmable element, the radiation hard latch controlling the programmable element; and providing an interface that couples at least one of the plurality of configuration bits to the radiation hard latch when the write circuitry writes to the at least one of the plurality of configuration bits.
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