发明名称 |
Method of Polishing Compound Semiconductor Substrate, Compound Semiconductor Substrate, Method of Manufacturing Compound Semiconductor Epitaxial Substrate, and Compound Semiconductor Epitaxial Substrate |
摘要 |
Compound-semiconductor-substrate polishing methods, compound semiconductor substrates, compound-semiconductor-epitaxial-substrate manufacturing methods, and compound semiconductor epitaxial substrates whereby oxygen superficially present on the substrates reduced. A compound semiconductor-substrate polishing method includes a preparation step (S10), a first polishing step (S20), and a second polishing step (S30). In the preparation step (S10), a compound semiconductor substrate is prepared. In the first polishing step (S20), the compound semiconductor substrate is polished with a chloric polishing agent. In the second polishing step (S30), subsequent to the first polishing step (S20), a polishing operation utilizing an alkaline aqueous solution containing an inorganic builder and having pH of 8.5 to 13.0 inclusive is performed.
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申请公布号 |
US2008299350(A1) |
申请公布日期 |
2008.12.04 |
申请号 |
US20070863261 |
申请日期 |
2007.09.28 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MEZAKI YOSHIO;NISHIURA TAKAYUKI;NAKAYAMA MASAHIRO |
分类号 |
B32B3/00;B24B37/00;B32B15/04;H01L21/304 |
主分类号 |
B32B3/00 |
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