发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING SAME
摘要 A semiconductor integrated circuit includes at least one first circuit portion and at least one second circuit portion. The first circuit portion includes a first interconnect or a diffusion layer formed by exposure using a high-precision mask. The second circuit portion includes a second interconnect or a diffusion layer formed by exposure using a first low-precision mask having a lower precision than the high-precision mask.
申请公布号 US2008296628(A1) 申请公布日期 2008.12.04
申请号 US20080127905 申请日期 2008.05.28
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KANEKO YOSHIO
分类号 H01L21/26;H01L27/105 主分类号 H01L21/26
代理机构 代理人
主权项
地址