发明名称 CHARGE PUMP CIRCUIT AND SLICE LEVEL CONTROL CIRCUIT
摘要 The invention provides a charge pump circuit which reduces rise time of an output current even when an input signal is of high frequency. PMOS1 and PMOS2 have gates connected to each other, and the gate of the PMOS1 is connected to the drain thereof. A supply potential (Vdd) is applied to the sources of the PMOS1 and the PMOS2, and the PMOS1 and the PMOS2 form a current mirror circuit. First and second switching elements and a first constant-current source are connected to the drain of the PMOS2. A connection point (a node) of the first switching element and the second switching element is connected to an output terminal. The drain of the PMOS1 is connected to the first constant-current source through a third switching element, and connected to a second constant-current source through a fourth switching element.
申请公布号 US2008297232(A1) 申请公布日期 2008.12.04
申请号 US20080132996 申请日期 2008.06.04
申请人 SANYO ELECTRIC CO., LTD.;SANYO SEMICONDUCTOR CO., LTD. 发明人 YOSHIMURA TSUYOSHI;KAWAI TAICHIRO
分类号 G05F3/08 主分类号 G05F3/08
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