METHOD OF MANUFACTURING EPITAXIAL WAFER, AND EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for inexpensively manufacturing an epitaxial wafer having strong gettering performance without forming an epitaxial defect in an epitaxial layer by securely performing restoration heat treatment before a process for implanting carbon ions, forming a carbon ion implantation layer and forming a silicon epitaxial layer on an implantation face. SOLUTION: In the manufacturing method of the epitaxial wafer, the carbon ions are implanted, a carbon implantation layer is formed and heat treatment is performed in an atmosphere including ammonia or nitrogen by using a rapid heating/rapid cooling (RTA: rapid thermal annealing) device. The epitaxial layer is formed on a silicon wafer which is heat-treated. COPYRIGHT: (C)2009,JPO&INPIT