| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is sufficiently suppresive on the occurrence of insulation defects in operation. <P>SOLUTION: In a blue-violet semiconductor laser device 100, a pair of side faces of a semiconductor device structure 10U comprising a nitride-based semiconductor layer 10 are positioned respectively on the inner side of a pair of side faces of a substrate part 42U comprising a Ge substrate 42. Thus, in a direction orthogonal to the pair of side faces of the semiconductor device structure 10U, the pair of side faces of the semiconductor device structure 10U and the pair of side faces of the substrate part 42U are separated by a prescribed distance, respectively. Also, on the substrate part 42U, in a region between the pair of side faces of the substrate part 42U and the pair of side faces of the semiconductor device structure 10U, a current block layer 21 is formed. <P>COPYRIGHT: (C)2009,JPO&INPIT |
