| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a resistance element with a small planar area capable of passing a large amount of current with high reliability. <P>SOLUTION: The semiconductor device comprises a semiconductor substrate 101, an insulating film 14b, a semiconductor element EL, and a trench type built-in gate resistance 4t. The semiconductor substrate 101 has a first trench part T1. The insulating film 14b covers the inner surface of the first trench part T1. The semiconductor element EL has a channel area comprising a part of the semiconductor substrate 101 and a gate electrode 13. The trench type built-in gate resistance 4t is connected electrically with the gate electrode 13 and provided in the first trench part T1 via the insulating film 14b so as to serve as a resistance to the current flowing in the gate electrode 13. <P>COPYRIGHT: (C)2009,JPO&INPIT |
