| 摘要 |
PROBLEM TO BE SOLVED: To prevent characteristics degradation of writing to a memory cell. SOLUTION: The nonvolatile semiconductor memory includes two diffusion layers 9 formed in a semiconductor substrate 1, a gate insulating film 2 formed on the surface of a channel region, a laminated gate electrode formed on the gate insulating film 2, and an interlayer insulating film 10 which covers the laminated gate electrode. The laminated gate electrode comprises a first gate electrode 3 formed on the gate insulation film 2, an inter-gate insulating film 4 formed on the first gate electrode 3, a second gate electrode 5 formed on the inter-gate insulating film 4, and a third gate electrode 11 formed on the second gate electrode 5. Between a side face in a channel length direction of the second gate electrode 5 and the interlayer insulating film 10, an oxide film 8 is interposed. The side face in the channel length direction of the third gate electrode 11 is set in contact with the interlayer insulating film 10. COPYRIGHT: (C)2009,JPO&INPIT
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