| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device that has a bottom electrode for controlling metallic diffusion. SOLUTION: As shown in FIG. 2, the semiconductor memory device is comprised of an insulating film covering a semiconductor substrate 10, a conductive plug 40 running through the insulating film, a bottom electrode 53 that is formed on the insulating film and electrically connected to the conductive plug, a dielectric thin film formed on the bottom electrode, and an upper electrode 55 formed on the dielectric thin film. The bottom electrode 53 is composed of metal containing 1 mol% or more oxygen. COPYRIGHT: (C)2009,JPO&INPIT
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