发明名称 METHOD AND APPARATUS FOR MODIFYING A BURST LENGTH FOR SEMICONDUCTOR MEMORY
摘要 A method and apparatus for performing a burst access operation for a memory device. The method includes receiving a burst access command for the burst access operation and receiving a burst length modifying value for the burst access operation. A modified burst length is generated from a pre-programmed burst length using the burst length modifying value. The modified burst length is used for the burst access operation without changing the pre-programmed burst length. The burst access operation is performed with the modified burst length.
申请公布号 US2008301391(A1) 申请公布日期 2008.12.04
申请号 US20070757135 申请日期 2007.06.01
申请人 OH JONG-HOON 发明人 OH JONG-HOON
分类号 G06F12/00 主分类号 G06F12/00
代理机构 代理人
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