POLARIZATION-INDUCED BARRIERS FOR N-FACE NITRIDE-BASED ELECTRONICS

摘要

A method for fabricating a potential barrier for a nitrogen-face (N-face) nitride-based electronic device, comprising using a thickness and polarization induced electric field of a Ill-nitride interlayer, positioned between a first Ill-nitride layer and a second Ill-nitride layer, to shift, e.g., raise or lower, the first Ill-nitride layer's energy band with respect to the second Ill-nitride layer's energy band by a pre-determined amount. The first Ill-nitride layer and second Ill-nitride layer each have a higher or lower polarization coefficient than the Ill-nitride interlayer' s polarization coefficient.