发明名称 CHEMICAL VAPOR DEPOSITION APPARATUS, AND MANUFACTURING METHOD OF FET AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce heat radiation from a heating element 4 to a substrate 9 in a chemical vapor deposition apparatus. SOLUTION: The heating element 4 is turned to a wire-like member which is disposed between a first ring 42 on the side of a gas distributor 32 for supplying a raw material gas and a second ring 42 on the side of a substrate holder 5 and generates Joule heat by being energized. By making the heating element 4 not parallel with the substrate 9, the amount of radiation heat reaching the substrate 9 from the heating element 4 is reduced. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008294474(A) 申请公布日期 2008.12.04
申请号 JP20080208496 申请日期 2008.08.13
申请人 CANON ANELVA CORP 发明人 NOMURA HIDEJI
分类号 H01L21/31;C23C16/42;C23C16/44;H01L21/318 主分类号 H01L21/31
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