| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a SOI wafer capable of simply preventing a p-type dopant included in a base wafer from outwardly diffusing from a surface opposite to a base wafer pasted surface due to high-temperature thermal treatment, capable of preventing a mixture into a SOI layer and capable of reducing warpages. <P>SOLUTION: The manufacturing method of the SOI wafer includes a step of preparing a base wafer, comprising a p<SP>+</SP>-silicon single-crystal wafer and a bond wafer comprising a silicon single-crystal wafer, containing a dopant with a lower concentration than that of the base wafer; a step of forming a silicon oxide film over an entire surface of the base wafer by thermal oxidation; a step of sticking the bond wafer to the base wafer via the silicon oxide film; and a step of thinning the bond wafer to form the SOI layer. The method has a step of forming a CVD insulation film on a surface opposite to the stuck surface of the base wafer, prior to the thermal oxidation step of the base wafer. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
