发明名称 |
METHOD OF MAKING A SEMICONDUCTOR DEVICE WITH EMBEDDED STRESSOR |
摘要 |
A method for forming a semiconductor device includes providing a semiconductor substrate; forming a gate dielectric over the semiconductor substrate; forming a gate electrode over the gate dielectric; forming an insulating layer over a sidewall of the gate electrode; defining source and drain regions in the semiconductor substrate adjacent to the insulating layer; implanting a dopant in the source and drain regions of the semiconductor substrate to form doped source and drain regions; forming a sidewall spacer adjacent to the insulating layer; forming a recess in the semiconductor substrate in the source and drain regions, wherein the recess extends directly underneath the spacer a predetermined distance from a channel regions; and forming a stressor material in the recess. The method allows the stressor material to be formed closer to a channel region, thus improving carrier mobility in the channel while not degrading short channel effects.
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申请公布号 |
US2008299724(A1) |
申请公布日期 |
2008.12.04 |
申请号 |
US20070756095 |
申请日期 |
2007.05.31 |
申请人 |
GRUDOWSKI PAUL A;DHANDAPANI VEERARAGHAVAN;GOEDEKE DARREN V;THEAN VOON-YEW;ZOLLNER STEFAN |
发明人 |
GRUDOWSKI PAUL A.;DHANDAPANI VEERARAGHAVAN;GOEDEKE DARREN V.;THEAN VOON-YEW;ZOLLNER STEFAN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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