发明名称 HIGH PERFORMANCE CHIP CARRIER SUBSTRATE
摘要 A multilayer chip carrier with increased space for power distribution PTHs and reduced power-related noise. In a multilayer chip carrier with two signal redistribution fanout layers, in addition to signal escape from near-edge signal pads at the first fanout layer, remaining signal pads are moved closer to the edge of the chip footprint. At the voltage layer below the first fanout layer, the remaining signal pads are moved again, closer to the edge of the chip footprint. In the second fanout layer, below the voltage layer, the remaining signal pads escape. The region where signal pads are moved provides increased space for power PTHs.
申请公布号 US2008296054(A1) 申请公布日期 2008.12.04
申请号 US20080164478 申请日期 2008.06.30
申请人 AUDET JEAN;MEMIS IRVING 发明人 AUDET JEAN;MEMIS IRVING
分类号 H01L23/12;H05K1/18;G06F17/50;H01L23/498;H01L23/50;H05K3/30 主分类号 H01L23/12
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