发明名称 TRANSISTOR, INTEGRATED CIRCUIT AND METHOD OF FORMING AN INTEGRATED CIRCUIT
摘要 A transistor, an integrated circuit and a method of forming an integrated circuit is disclosed. One embodiment includes a gate electrode. The gate electrode is disposed in a gate groove formed in a semiconductor substrate and includes a conductive carbon material.
申请公布号 US2008296674(A1) 申请公布日期 2008.12.04
申请号 US20070755141 申请日期 2007.05.30
申请人 QIMONDA AG 发明人 GRAHAM ANDREW;HARTWICH JESSICA;SCHOLZ ARND
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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