发明名称 |
COMPOSITION FOR ANTIREFLECTION FILM FORMATION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION |
摘要 |
<p>This invention provides a composition for antireflection film formation, having a predetermined level of pH, which has excellent storage stability and matching properties with a resist film and coatability, and can form an antireflection film having satisfactory optical properties. The composition for an antireflection film formation is a composition for the formation of an antireflection film provided on a resist film. The composition comprises a water-soluble film forming component and a predetermined fluorine compound. In the composition for antireflection film formation, the pH value can easily be regulated without deteriorating coatability by adding a predetermined fluorine compound, and a composition for antireflection film formation, having excellent storage stability and matching properties with a resist film can be provided. Further, since the fluorine compound can also contribute to an improvement in optical properties of the antireflection film, and, thus, a composition for antireflection film formation, which can form an antireflection film having excellent optical properties, can also be provided.</p> |
申请公布号 |
WO2008146626(A1) |
申请公布日期 |
2008.12.04 |
申请号 |
WO2008JP59046 |
申请日期 |
2008.05.16 |
申请人 |
TOKYO OHKA KOGYO CO., LTD.;SAWANO, ATSUSHI;KOSHIYAMA, JUN;HIROSAKI, TAKAKO |
发明人 |
SAWANO, ATSUSHI;KOSHIYAMA, JUN;HIROSAKI, TAKAKO |
分类号 |
G03F7/11;G03F7/004;H01L21/027 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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