TRANSFER GATE FOR CMOS IMAGE SENSORS INCORPORATING A SMALL NEGATIVE BIAS

摘要

A CMOS image sensor is provided to reduce the dark current and increase the blooming control and the charge transfer capability. A pixel of the image sensor comprises the transfer gate(306), the photo diode, and the floating diffusion(308). The transfer gate is formed on the substrate(301) of the first conductivity type by interposing the gate insulating layer. The photodiode is formed on the substrate surface at the one side of the transfer gate. The floating diffusion is formed on the substrate surface at the other side of the transfer gate. The transfer gate receives the negative bias for the electric charge integrated cycle.