| 摘要 |
A thin film forming method including the silicon is provided to facilitate the control of the clean of the chamber and the administration of the exhaust line by effectively using the silicon source gas. A thin film forming method including the silicon includes the following steps: the step for loading the substrate(100) within the chamber; the step for supplying the process gas not including the silicon within the chamber and stabilizing; the step for depositing the thin film including the silicon by applying the RF power at the same time of supplying the silicon source gas. The silicon source gas includes one of SiH4, Si2H6, SiCl2H2, and SiHCl3.
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