| 摘要 |
A dry etching method of the silicon film is provided to dry-etch the silicon layer of amorphous silicon using the mixed gas having the fluorine gas and hydrochloric acid gas without using the SF6 gas. A thin film transistor panel comprises the glass substrates(1), the gate electrode(2), the gate insulating layer(3), the semiconductor film, the channel passivation layer(5), and the ohmic contact layer. The gate electrode consisting of the chrome orange is installed on the glass substrate. The gate insulating layer consisting of the silicon nitride is installed on the glass substrate including the gate electrode. The semiconductor film consisting of the intrinsic amorphous silicon is installed on the gate insulating layer. The channel passivation layer consisting of the silicon nitride is installed on the semiconductor film. The ohmic contact layer consisting of the n-type amorphous silicon is installed on the semiconductor film. The source electrode(8) and the drain electrode(9) consisting of the chrome are installed on the ohmic contact layer.
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