发明名称 |
Method for manufacturing soi wafer |
摘要 |
<p>There is disclosed a method for manufacturing an SOI wafer comprising at least: implanting a hydrogen ion, a rare gas ion, or both the ions into a donor wafer formed of a silicon wafer or a silicon wafer having an oxide film formed on a surface thereof from a surface of the donor wafer, thereby forming an ion implanted layer; performing a plasma activation treatment with respect to at least one of an ion implanted surface of the donor wafer and a surface of a handle wafer, the surface of the handle wafer is to be bonded to the ion implanted surface; closely bonding these surfaces to each other; mechanically delaminating the donor wafer at the ion implanted layer as a boundary and thereby reducing a film thickness thereof to provide an SOI layer, and performing a heat treatment at 600 to 1000°C; and polishing a surface of the SOI layer for 10 to 50 nm based on chemical mechanical polishing. A method for manufacturing with excellent productivity an SOI wafer having an SOI layer with a mirror-finished surface and high film thickness uniformity can be provided.</p> |
申请公布号 |
EP1998368(A2) |
申请公布日期 |
2008.12.03 |
申请号 |
EP20080009380 |
申请日期 |
2008.05.21 |
申请人 |
SHIN-ETSU CHEMICAL COMPANY, LTD. |
发明人 |
AKIYAMA, SHOJI;KUBOTA, YOSHIHIRO;ITO, ATSUO;TANAKA, KOICHI;KAWAI, MAKOTO;TOBISAKA, YUUJI |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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