| 摘要 |
<p>#CMT# #/CMT# A highly pure gas is passed at pressure of 0.1-10 bar over a highly pure solid which does not contaminate the gas. The solid is placed in a highly pure container. The wall (3) of the container has transparency of 85% or more. The container is subjected to irradiation using infrared rays to heat the solid, and then to heat the gas to a temperature of 300-1200[deg] C. #CMT# : #/CMT# A highly pure gas is passed at pressure of 0.1-10 bar over a highly pure solid which does not contaminate the gas. The solid is placed in a highly pure container. The wall of the container has transparency of 85% or more. The container is subjected to irradiation using infrared rays to heat the solid, and then to heat the gas to a temperature of 300-1200[deg] C. The solid contains silicon, silicon carbide and/or silicon nitride (Si 3N 4), preferably polycrystalline silicon (2). The container comprises quartz glass. An independent claim is included for apparatus for contamination-free heating of gas. #CMT#USE : #/CMT# Method used for contamination-free heating of highly pure gas such as silane, halosilane and/or hydrogen (all claimed). #CMT#ADVANTAGE : #/CMT# The method enables effective contamination-free heating of highly pure gas. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows the sectional view of the apparatus for contamination-free heating of gas. 1 : Infrared radiator 2 : Polycrystalline silicon 3 : Wall 4 : Inlet of highly-pure gas 5 : Outlet of highly-pure gas.</p> |
