| 摘要 |
A novel precursor for the organometal chemical vapor deposition of a chalcogenide semiconductor thin film is provided to improve the uniformity of a thin film. A precursor for the organometal chemical vapor deposition of a chalcogenide semiconductor thin film contains two kinds of the metal elements of the group III or two kinds of chalcogen atoms of the group VI and is represented by the formula 2, wherein M and M' are identical or different each other and are the metal element of the group III selected from In, Ga and Al; E and E' are identical or different each other and are the chalcogen atom of the group VI selected from S, Se and Te; at least one of M and M' or E and E' is a different atom; and R and R' are independently a C1-C6 alkyl group.
|
