| 摘要 |
A method of cleaning a patterning device, the patterning device having at least organic coating material (OLED material) deposited thereon, comprises the step of providing a cleaning plasma for removing the coating material from the patterning device by means of a plasma etching process. During the step of removing the coating material from the patterning device the temperature of the patterning device does not exceed a critical temperature causing damage to the patterning device, while maintaining a plasma etching rate of at least 0.2 µm/min, particularly 0.5 µm/min, particularly 1 µm/min, particularly 2.5 µm/min, particularly 5 µm/min. In order to generate a pulsed cleaning plasma pulsed energy is provided. The method can be carried out in a direct plasma etching process or in a remote plasma etching process. Different etching processes may be combined or carried out subsequently. |
