| 摘要 |
The present invention is related to a method of determination of the quality of the interface surface between a layer of a dielectric material and the top surface of the semiconductor substrate comprising the steps of:
€¢ providing a semiconductor substrate with a top surface whereon a layer of a dielectric material is deposited thereby forming an interface surface, the surface of said layer of the dielectric material being or not in direct contact with the semiconductor substrate defining a top surface,
€¢ applying a charge through discharge means on a dedicated area of said top surface,
€¢ measuring a voltage Vs on said top surface,
€¢ applying illumination means to said dedicated area, defining an illuminated spot,
€¢ measuring during the illumination of said area the photovoltage inside and outside said determined illuminated spot by means of measuring means.
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