NON-VOLATILE MEMORY DEVICE OF USING SEMICONDUCTOR QUANTUM DOT

摘要

A nonvolatile optoelectronic memory device is provided to minimize the power consumption by using only optical signal. A nonvolatile memory device comprises the substrate(100), the source/drain region(120), and the gate electrode(140). The source/drain region is formed on the top of the substrate. The gate electrode is formed on the upper part of channel region between the source/drain areas. The gate electrode varies the threshold voltage according to the optical signal irradiated. The gate electrode comprises the dielectric layer(142), and the transparent electrode layer(144). The dielectric layer is formed on the upper part of the channel region and has the semiconductor quantum dot(143). The transparent electrode layer is formed on the dielectric layer upper part and the optical signal is transmitted.