发明名称 SEMICONDUCTOR DEVICE STRUCTURE AND INTEGRATED CIRCUIT THEREFOR
摘要 <p>A semiconductor device structure comprises a plurality of vertical layers and a plurality of conductive elements wherein the vertical layers and plurality of conductive elements co-operate to function as at least two active devices in parallel. The semiconductor device structure may also comprise a plurality of horizontal conductive elements wherein the structure is arranged to support at least two concurrent current flows, such that a first current flow is across the plurality of vertical conductive elements and a second current flow is across the plurality of horizontal conductive elements.</p>
申请公布号 EP1997142(A1) 申请公布日期 2008.12.03
申请号 EP20060724650 申请日期 2006.03.13
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 RENAUD, PHILIPPE;BESSE, PATRICE;GENDRON, AMAURY
分类号 H01L27/02 主分类号 H01L27/02
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