THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY DEVICE HAVING THE THIN FILM TRANSISTOR

摘要

The flat panel display including the thin film transistor and the manufacturing method thereof and thin film transistor are provided to improve the electrical characteristic of device by the reducing a leakage current at the non-resistance decrease of source and drain region and channel region. The thin film transistor comprises the insulating substrate(10), the gate electrode(12), the semiconductor layer(14), the diffusion barrier(15), the second insulating layer, source and drain electrode(17a and 17b). The gate electrode is formed on the insulating substrate. The semiconductor layer is insulated with the gate electrode with the first insulating layer. The semiconductor layer provides the channel region, source and drain region. The diffusion barrier is formed on the semiconductor layer of the channel region. The second insulating layer contains the hydrogen ion(16a). The contact hole is formed so that the second insulating layer source and drain region are exposed. The source and drain electrode are contacted with source and drain region through the contact hole.