FABRICATION METHOD OF ZNO FAMILY THIN FILM TRANSISTOR

摘要

A ZnO system thin film transistor and a manufacturing method thereof are provided to improve the electrical characteristic by suppressing the damage caused by the plasma effectively. A ZnO system thin film transistor comprises the substrate(10), the channel layer(22), the gate(20), the gate isolation layer(21), the source and drain electrodes(23a, 23b), and the passivation layer(24). The channel layer is formed on substrate. The channel layer comprises the multi laminated ZnO system unit semiconductor layer. The gate is built between the substrate and the channel layer. The gate isolation layer is prepared between the channel layer and the gate. The source and drain electrodes are prepared at both sides of the channel layer. The passivation layer covers the channel layer, source and drain electrodes. The upper most layer of the channel layer contains the ZnO with the concentration lower than the layer which is under the upper most layer.