SILICON OXIDE NITRIDE OXIDE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The SONOS memory device and manufacturing method thereof are provided to enhance the degree of integration without reducing the length of the formed channel. The SONOS method for fabricating the memory device comprises as follows. A step is for doping the first diffusion region in the lower part of substrate. A step is for forming silicon pillar(520) of the predetermined depth by etching the substrate selectively. A step is for doping the second diffusion region(610) on the top of the silicon pillar. A step is for forming the trapping layer laminate(711~714) in one side of the silicon pillar. A step is for forming the upper insulating layer(810) to cover the silicon pillar and trapping layer laminate. A step is for forming the gate(910) among the silicon pillar to contact with the upper insulating layer.