发明名称 |
Semiconductor substrate and manufacturing method of semiconductor device |
摘要 |
To provide a semiconductor substrate including a crystalline semiconductor layer which is suitable for practical use, even if a material different from that of the semiconductor layer is used for a supporting substrate, and a semiconductor device using the semiconductor substrate. The semiconductor substrate includes a bonding layer which forms a bonding plane, a barrier layer formed of an insulating material containing nitrogen, a relief layer which is formed of an insulating material that includes nitrogen at less than 20 at.% and hydrogen at 1 at.% to 20 at.%, and an insulating layer containing a halogen, between a supporting substrate and a single-crystal semiconductor layer. The semiconductor device includes the above-described structure at least partially, and a gate insulating layer formed by a microwave plasma CVD method using SiH 4 and N 2 O as source gases is in contact with the single-crystal semiconductor layer.
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申请公布号 |
EP1998369(A2) |
申请公布日期 |
2008.12.03 |
申请号 |
EP20080009856 |
申请日期 |
2008.05.29 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;ICHIJO, MITSUHIRO;FURUNO, MAKOTO;OHTSUKI, TAKASHI;OKAZAKI, KENICHI;TANAKA, TETSUHIRO;YASUMOTO, SEIJI |
分类号 |
H01L21/762;H01L21/28;H01L21/84 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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