| 摘要 |
<p>Disclosed is a block select circuit in a flash memory device. The block select circuit comprises a select unit including a flash memory cell that is programmable and erasable by a given voltage condition, for outputting a block select signal depending on address signals and a state of the flash memory cell, a high-voltage pumping unit for outputting a signal to keep a given high voltage according to the block select signal and the clock signal, and a switching unit for applying a given bias to a gate select line, a word line and a source select line of a flash memory cell block according to the output signal of the high-voltage pumping unit. A given voltage is not applied to a fail block by only the operation of programming the flash memory cell of an erase state. Therefore, it is possible to process a fail block even after being packaged.</p> |
