Split-gate non-volatile EPROM memory cells and method of manufacturing the same

摘要

A method of forming a split-gate non-volatile EPROM memory cell which includes forming first and second adjacent floating gates self-aligned to a field oxide region (111) therebetween. An oxide layer (131) is formed covering the first and second adjacent floating gates (131) and the field oxide region, the oxide layer electrically isolating the first and second adjacent floating gates from one another. A control gate (137) is formed on the oxide layer on the first and second adjacent floating gates (131). Related devices are also disclosed.